Cascode topology using HEMT FET technology for the design and analysis of low noise amplifier circuit
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Full Text |
Pdf
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Author |
Sivapuram Dileep Kumar, S. K. Masthan Basha and M. Aravind Kumar
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e-ISSN |
1819-6608 |
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On Pages
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790-795
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Volume No. |
21
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Issue No. |
12
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Issue Date |
August 20, 2026
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DOI |
https://doi.org/10.59018/062684
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Keywords |
low noise amplifier, feedback technique, T-shaped inductive network, and gain.
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Abstract
The current approach used the CMOS technique to produce LNA. The LNA features a two-stage common-source (CS) buffer amplifier to reduce noise and an active balun to transform single-ended signals into differential signals. This architecture will result in severe noise interference and poor gain. The "Low Noise Amplifier circuit design using Cascode topology with HEMT FET technology" is the suggested design. The main challenge and demanding aspect in digital circuit design applications is producing the necessary acceptable output with less noise, less power consumption, and fewer transistors. Any kind of electrical amplifier will boost the signal's strength and the noise level at its input, but it will increase the noise level as well. LNAs are designed to lessen this additional noise. By selecting certain parts, operating locations, and circuit topologies. Currently available low noise amplifiers use MOSFET technology to boost very low-power signals without greatly reducing their signal-to-noise ratio (SNR), which is a crucial component of digital circuit design. The purpose of LNAs is to reduce this additional noise by choosing specific components, operating points, and circuit configurations. The existing method employs low frequencies (around X), generates high noise (3.9 dB), produces gain (over 19 dB), and consumes power. Reducing excess noise must be balanced with other design goals like impedance matching and power enhancement. Therefore, a new design utilizing HEMT FET technology with a frequency in the X band was proposed using ADS (Advanced Design System) software in order to reduce the noise figure and raise the gain and linearity in order to meet the required target of acceptable output. LNA generates a gain of more than 10 dB and a noise figure of more than 3 dB, respectively, while taking into account the selection of HEMT (High Electron Mobility Transistor) topologies and the simultaneous matching approach. As a result, new digital circuit designs and communication applications may benefit from the proposed LNA with ADS 150nm software.
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